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ZXMN3A03E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed drain current (c)
SYMBOL
V DSS
V GS
I D
I DM
LIMIT
30
20
4.6
3.7
3.7
17
UNIT
V
V
A
A
Continuous source current (body diode)
Pulsed source current (body diode) (c)
(b)
I S
I SM
2.6
17
A
A
Power dissipation at T A =25°C
Linear derating factor
(a)
P D
1.1
8.8
W
mW/°C
Power dissipation at T A =25°C (b)
Linear derating factor
Operating and storage temperature range
P D
T j :T stg
1.7
13.6
-55 to +150
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
Junction to ambient
(a)
(b)
R θ JA
R θ JA
113
73
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 3 - OCTOBER 2005
SEMICONDUCTORS
2
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